2018EB™

Silicon Detector Preamplifier
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2018EB™

Silicon Detector Preamplifier
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The Model 2018EB preamp converts the charge carriers produced in the detector by each nuclear event into a voltage pulse.

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Features

  • Low noise design: < 3.0 keV (Si) at 0 pF
  • High energy rate capability: up to 2 x 106 MeV per second
  • FET input, diode protected
  • Small size
  • Capable of operating in a vacuum chamber

Description

The Model 2018EB charge sensitive FET input preamp is designed for optimum performance with silicon detectors such as the Canberra™ Passivated Implanted Planar Silicon (PIPS®) detectors and legacy Silicon Surface Barrier (SSB) detectors. The preamp converts the charge carriers produced in the detector by each nuclear event into a voltage pulse. The amplitude of this voltage pulse is proportional to the collected charge according to 0.45 V per pC. This translates to a gain of 20 mV per MeV for silicon detectors operated at room temperature.

The output provides a positive polarity signal when the preamp is used with a positively biased detector. The output signal is extremely linear with energy, which makes it an ideal preamp for energy spectroscopy. The high charge rate capability of the preamp is evidenced by an energy rate capacity of 2 x 106 MeV per second when used with silicon detectors. In order to take full advantage of such high count rate capability, a main amplifier or MCA with a correspondingly high count rate ability, such as the Lynx® analyzer, should be used.